Title :
A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier
Author :
Aoki, I. ; Kee, S. ; Rutledge, D. ; Hajimiri, Ali
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper demonstrated the first 2-stage, 2.8 W, 1.8 V, 1.9 GHz fully-integrated distributed active transformer (DAT) power amplifier with 50 Ω input and output matching using 0.18 μm CMOS transistors. It has a small-signal gain of 27 dB. The amplifier provides 2.8 W of power into a 50 Ω load with a PAE of 50%.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; impedance matching; power integrated circuits; 1.8 V; 1.9 GHz; 2.8 W; 27 dB; 50 percent; CMOS power amplifier; RF CMOS IC; RF power amplifier; distributed active transformer; input matching; output matching; two-stage amplifier; CMOS technology; High power amplifiers; Impedance matching; Integrated circuit technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Substrates; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213925
