The Total Dose Radiation Hardened MOSFET with Good High-temperatue Performance

Author

Cheng, Jianbing ; Zhang, Bo ; Li, Zhaoji

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2007

Firstpage

1252

Lastpage

1255

Abstract

Total dose radiation hardened partial silicon-on-insulator (PSOI) MOSFET structure is proposed in this paper. Radiation effects of SOI and PSOI MOSFET are discussed and compared. Simulation results show that the subthreshold performance of SOI MOSFET is significantly deteriorated even under low radiation dose. But the total dose radiation tolerance of PSOI MOSFET is superior to its conventional SOI counterpart under the same radiation dose. Additionally, the influence of transistor´s physical parameters on total dose radiation is analyzed. The tolerance is enhanced with the increase of the PSOI silicon window length when the devices are under high total dose conditions. Furthermore, PSOI MOSFET performs better than that of SOI MOSFET at high temperature under harsh radiation condition.

Keywords

MOSFET; radiation effects; silicon-on-insulator; SOI MOSFET; partial silicon-on-insulator; radiation effects; total dose radiation tolerance; Electron traps; Isolation technology; Lead compounds; MOSFET circuits; Microelectronics; Radiation effects; Radiation hardening; Silicon on insulator technology; Solid state circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on

Conference_Location

Kokura

Print_ISBN

978-1-4244-1473-4

Type

conf

DOI

10.1109/ICCCAS.2007.4348274

Filename

4348274