Title :
Low voltage GaAs power amplifiers for personal communications at 1.9 GHz
Author :
Ngo, D.-T. ; Beckwith, B. ; O´Neil, P. ; Camilleri, N.
Author_Institution :
Motorola, Tempe, AZ, USA
Abstract :
Personal communication systems operating at 1.9 GHz require high-efficiency power amplifiers (PAs) operating at 3 V or below. Results on GaAs PAs constructed in a module and an MMIC (monolithic microwave integrated circuit) format are presented. These PAs operate at 3 V with 30 dB gain, 28 dBm output power, and 50% efficiency.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave amplifiers; personal communication networks; power amplifiers; 3 V; 30 dB; 50 percent; GaAs; MMIC; output power; personal communications; power amplifiers; Batteries; Circuits; FETs; Fixtures; Gallium arsenide; High power amplifiers; Low voltage; Microstrip; Power amplifiers; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276722
