• DocumentCode
    1673480
  • Title

    Characterization of multiferroic thin films directly deposited on silicon for novel device applications

  • Author

    Prashanthi, K. ; Palkar, V.R.

  • Author_Institution
    Centre for Excellence in Nanoelectron., IIT Bombay, Mumbai, India
  • fYear
    2010
  • Firstpage
    900
  • Lastpage
    901
  • Abstract
    We have investigated the multiferroic and dielectric properties in Dy modified BiFeO3 thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.
  • Keywords
    bismuth compounds; dielectric thin films; iron compounds; multiferroics; pulsed laser deposition; silicon; BiFeO3; Si; device applications; dielectric properties; future CMOS applications; gate dielectrics; multiferroic based MEMS devices; multiferroic properties; multiferroic thin films; pulsed laser deposition; silicon; Dielectric devices; Dielectric thin films; Microelectromechanical devices; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; Thin film devices; Usability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425138
  • Filename
    5425138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1673480