A 17 GHz linear 50 Ω output driver in 0.12 μm standard CMOS

Author

Thüringer, Ronald ; Tiebout, Marc ; Simbürger, Werner ; Kienmayer, Christoph ; Scholtz, Arpad L.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2003

Firstpage

207

Lastpage

210

Abstract

This work presents the design of a monolithically integrated CMOS RF tuned output amplifier for an operating frequency of 17 GHz. The linear output amplifier consists of 2 push-pull stages working in A-class and is processed in 1.5 V, 0.12 μm standard CMOS technology. Measurement results show that the amplifier achieves a gain of 11 dB, a 1 dB compression point of 5 dBm and a third order intercept point of 15 dBm, both referred to the output. The circuit consumes 80 mA DC current at a supply voltage of 1.5 V.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; driver circuits; field effect MMIC; integrated circuit design; 0.12 micron; 1.5 V; 11 dB; 17 GHz; 80 mA; A-class operation; CMOS RF amplifier; RF tuned output amplifier; differential push-pull stages; linear driver; low voltage output driver; monolithically integrated amplifier; standard CMOS technology; CMOS process; CMOS technology; Current supplies; Driver circuits; Gain measurement; Integrated circuit measurements; Integrated circuit technology; Radio frequency; Radiofrequency amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213927

Filename

1213927