Trench isolation technique for reverse blocking IGBT using Boron nitride doping wafers

A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation technique which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been demonstrated with the electrical measurements of the fabricated devices.