A new two dimensional analytical breakdown model of SOI RESURF devices

Author

Guo, Yufeng ; Li, Zhaoji ; Zhang, Bo

Author_Institution

Nanjing Univ. of Posts & Telecommun., Nanjing

fYear

2007

Firstpage

1278

Lastpage

1282

Abstract

In this paper, a new breakdown model of SOI RESURF devices is proposed based on solving 2-D Poisson equation. The approach explores the physical insights of the lateral and vertical breakdowns for both of the completely and incompletely depleted drift regions. Analytical 2-D electrostatic potential and electric fields distributions are compared with the simulating results by MEDICI, The impacts of the geometry parameters on the breakdown voltage are also investigated by the analytical model and numerical simulation. A well agreement between the analytical and simulating results proofs the availability of the model. Finally, as a further experimental verification, LDMOS with a breakdown voltage of 220 V was fabricated on a bonding SOI wafer with a top silicon thickness of 3.0 mum and a buried oxide thickness of 1.5 mum.

Keywords

MOS integrated circuits; Poisson equation; electric breakdown; numerical analysis; silicon-on-insulator; wafer bonding; 2D Poisson equation; LDMOS; SOI RESURF devices; bonding SOI wafer fabrication; breakdown voltage; geometry parameters; lateral-vertical breakdowns; numerical simulation; voltage 220 V; Analytical models; Availability; Electric breakdown; Electric potential; Electrostatic analysis; Geometry; Medical simulation; Numerical simulation; Poisson equations; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on

Conference_Location

Kokura

Print_ISBN

978-1-4244-1473-4

Type

conf

DOI

10.1109/ICCCAS.2007.4348280

Filename

4348280