Metal organic deposition of LaNiO3 conductive films through a novel wet oxygen annealing process

LaNiO₃ films were prepared through the metal organic deposition method using La(NO₃)·4H₂O and Ni(CH₃COO)₂·4H₂O as starting materials, acetylacetone as a complexing agent, and 2-methoxyethanol as a solvent. The effect of the annealing atmosphere and ion stoichiometry on the film conductivity was examined. The results showed that the LaNiO₃ phase was formed by the reaction between NiO, La₂NiO₃ and O₂. Thus, the film annealed under oxidization atmosphere had a higher conductivity than those annealed under nitrogen or air. Especially, annealed under wet O₂, the LaNiO₃ film had the highest conductivity, and the resistivity as low as (2~5)×10^-4 Ω·cm. The film density could be improved by increasing the film thickness, resulting the decreasing of the film resistivity.