Title :
Differential VCO and frequency tripler using SiGe HBTs for the 24 GHz ISM band
Author :
Danesh, Mina ; Gruson, Frank ; Abele, Peter ; Schumacher, Hermann
Author_Institution :
Microwave Commun. Div., Harris Corp., Montreal, Que., Canada
Abstract :
A frequency source generator chip was designed and built in a commercial SiGe process for an integrated front-end transceiver operating in the 24 GHz ISM band. It consists of a negative resistance cross-coupled differential VCO, oscillating at 8 GHz with a 150 MHz tuning range, having an output power of 0 dBm and a phase noise of -90 dBc/Hz at 100 kHz offset. The VCO drives a differential amplifier used as a frequency tripler which results in an overall voltage control frequency source operating at a nominal frequency of 23.5 GHz with a 420 MHz tuning range. It has a -10 dBm output power and consumes 180 mW. Its phase noise is -80 dBc/Hz at 100 kHz. The total chip area measures 600 × 300 μm2.
Keywords :
Ge-Si alloys; MMIC frequency convertors; MMIC oscillators; bipolar MMIC; bipolar analogue integrated circuits; circuit tuning; frequency multipliers; heterojunction bipolar transistors; negative resistance circuits; phase noise; semiconductor materials; voltage-controlled oscillators; 180 mW; 24 GHz; ISM band; SiGe; SiGe HBT MMIC; differential amplifier; frequency tripler; integrated front-end transceiver; negative resistance cross-coupled differential VCO; output power; phase noise; tuning range; voltage control frequency source generator chip; Differential amplifiers; Frequency; Germanium silicon alloys; Phase noise; Power amplifiers; Power generation; Silicon germanium; Transceivers; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213943
