DocumentCode :
1674022
Title :
Piezoelectric evaluation of UV-illuminated PZT films by piezorsponse force microscopy
Author :
Hong, Cin-Guan ; Hsu, Ching-Pin ; Yang, Cheng-Fu ; Leu, Ching-Chich
Author_Institution :
Dept. of Chem. & Mater. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fYear :
2010
Firstpage :
576
Lastpage :
577
Abstract :
The Pb(Zr0.6,Ti0.4)O3 (PZT) films were prepared using a sol-gel process on top of Pt (150nm)/TiO2(20nm)/SiO2/Si. Deposited solution layers were exposed to ultraviolet light illumination during the baking process. Then, we used the piezoresponse force microscopy (PFM) to perform the nanoscale observation of ferroelectric domain structure in PZT films.
Keywords :
electric domains; ferroelectric thin films; lead compounds; liquid phase deposition; piezoelectric thin films; scanning probe microscopy; sol-gel processing; ultraviolet radiation effects; PFM; PZT; Pb(Zr0.6Ti0.4)O3 films; Pt-TiO2-SiO2-Si; Si; baking process; ferroelectric domain structure; piezoelectric evaluation; piezoresponse force microscopy; size 150 nm; size 20 nm; sol-gel process; ultraviolet light illumination; Capacitors; Chemical elements; Ferroelectric films; Ferroelectric materials; Lighting; Microscopy; Optical films; Piezoelectric films; Semiconductor films; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425159
Filename :
5425159
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1674022
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