X band BiCMOS SiGe 0.35 μm voltage controlled oscillator in parallel and reflection topology and external phase noise improvement solution

Author

Wong, W. ; Cibiel, G. ; Tartarin, J.G. ; Tournier, É ; Plana, R. ; Llopis, O.

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2003

Firstpage

281

Lastpage

284

Abstract

This paper reports the design of two X band voltage controlled oscillators (VCO) implemented in the same ST Microelectronics SiGe BiCMOS technology and using the same active device. One VCO design is based on a parallel topology while the other one is based on a serial topology. The chips work with a single supply voltage of 3.3 V, and the measured phase noise performance for the feedback VCO is -85 dBc/Hz @ 100 kHz offset with a tuning range of 0.5 GHz and the simulated phase noise for the negative resistance VCO is -92 dBc/Hz @ 100 kHz offset with a tuning range of 1.1 GHz. Finally, an off chip solution is proposed to improve the phase noise performance.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; circuit tuning; feedback oscillators; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; negative resistance circuits; phase noise; semiconductor materials; voltage-controlled oscillators; 0.35 micron; 3.3 V; SiGe; VCO supply voltage; X band BiCMOS SiGe voltage controlled oscillators; feedback VCO; microwave VCO parallel/reflection topology; negative resistance VCO; phase noise improvement; serial topology; tuning range; Acoustic reflection; BiCMOS integrated circuits; Germanium silicon alloys; Microelectronics; Phase noise; Silicon germanium; Topology; Tuning; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213944

Filename

1213944