Title :
Ku-band monolithic 7-watt power amplifier using AlGaAs/GaAs 0.25- mu m T-gate heterostructure FET technology
Author :
Bryant, D.T. ; Salzman, K. ; Hudgens, R.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Two advanced Ku-band MMIC (monolithic microwave integrated circuit) power amplifiers have demonstrated state-of-the-art performance at upper Ku-band. One design delivers 7.2 W CW (continuous wave) and 9.3 W pulse at 25% power-added efficiency (PAE). The other design delivers 32% PAE at 2.7 W CW. Electromagnetic simulator (Sonnet EM) analysis contributed to the successful design of both circuits. A narrow 3-W, 30%-efficient, Ku-band MMIC is ready for phased-array radar T/R (transmit/receive) module applications. Power combining two of the 7-W MMICs has delivered 15.7 W (pulsed) in a small, simple 13-mm*18-mm assembly.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; radar equipment; 0.25 micron; 2.7 W; 25 percent; 32 percent; 7.2 W; AlGaAs-GaAs; EM simulator; Ku-band; MMIC; Sonnet EM; T-gate heterostructure FET technology; T/R module; phased-array radar; power amplifier; power-added efficiency; Gallium arsenide; Integrated circuit technology; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Pulse amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276742
