Device Temperature and Stress Distributions in Power Diode-A Finite Element Method

Author

Huang, Guangyu ; Tan, Cher Ming

Author_Institution

Nanyang Technological University, School of Electrical and Electronic Engineering, Block S2, Nanyang Avenue, Singapore 639798

Volume

1

fYear

2006

Firstpage

700

Lastpage

703

Abstract

The requirement of electrical-thermal-stress (ETS) modeling of semiconductor devices demands the use of finite element analysis (FEA) for device simulation. In this work, we employ a new finite element analysis software, FEMLAB for the ETS simulation of power diode, a basic building blocking for power electronic devices. In this preliminary work, static electrical and recovery transient characteristics are considered. The E-T model of the power diode is compared with the results from Medici, and the T-S model of the power diode is compared with the results from ANSYS. Good agreement are obseved from the comparison.

Keywords

Finite Element Method; electrical-thermal (E-T) model; electrical-thermal-stress (ETS) model; power P; thermal-stress (T-S) model; Analytical models; Finite element methods; Medical simulation; Poisson equations; Power electronics; Semiconductor devices; Semiconductor diodes; Semiconductor process modeling; Stress; Temperature distribution; Finite Element Method; electrical-thermal (E-T) model; electrical-thermal-stress (ETS) model; power P; thermal-stress (T-S) model;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drives Systems, 2005. PEDS 2005. International Conference on

Print_ISBN

0-7803-9296-5

Type

conf

DOI

10.1109/PEDS.2005.1619775

Filename

1619775