DocumentCode
1674095
Title
Investigation on 3.3 kV-50 A IGBT protection against over-voltage conditions
Author
Flores, D. ; Hidalgo, S. ; Rebollo, J. ; Caramel, C. ; Sánchez, J.L. ; Legal, J. ; Austin, P. ; Imbernon, E.
Author_Institution
Centro Nac. De Microelectron. IMB-CNM-CSIC, Barcelona, Spain
fYear
2009
Firstpage
1
Lastpage
7
Abstract
This paper deals with the design and fabrication of monolithically integrated voltage sensors with 3.3 kV IGBTs. Firstly, the sensor concept is introduced, and experimental validation on 600 V IGBTs is presented. Guidelines for the design of a 3.3 kV IGBT including the reported anode voltage and current sensors are provided together with its process fabrication.
Keywords
insulated gate bipolar transistors; overvoltage protection; power semiconductor devices; IGBT; anode voltage; current 50 A; current sensors; insulated gate bipolar transistors; monolithically integrated voltage sensors; over-voltage protection; voltage 3.3 kV; voltage 600 V; Anodes; Cathodes; Electric breakdown; Fabrication; Guidelines; Insulated gate bipolar transistors; Multichip modules; Protection; Thermal resistance; Voltage; IGBT; high power discrete device; traction application;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location
Barcelona
Print_ISBN
978-1-4244-4432-8
Electronic_ISBN
978-90-75815-13-9
Type
conf
Filename
5279253
Link To Document