High performances CVD diamond Schottky barrier diode — Simulation and carrying out

Author

Kone, S. ; Ding, H. ; Schneider, H. ; Isoird, K. ; Civrac, G.

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2009

Firstpage

1

Lastpage

8

Abstract

We have fabricated and simulated a p-type diamond Schottky diode on homoepitaxial CVD diamond. First simulations of the device under development are presented. These simulations are performed on SENTAURUS TCAD. Then, technologic steps needed to carry out the experimental device are described. From C-V measurements, the B-acceptors concentration and the barrier height extracted were N_A ~ 1,2.10¹⁷cm-³and Phi_B = 1,8 eV respectively. Finally, forward current-voltage experimental measurements and simulation characteristics are compared. The device yields a maximum current density of 1200 A/cm² on forward direction and breakdown voltage of 25 V at room temperature. Although promising, these results do not meet simulation predictions.

Keywords

Schottky barriers; Schottky diodes; chemical vapour deposition; diamond; elemental semiconductors; power semiconductor diodes; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; technology CAD (electronics); B-acceptor concentration; C; C-V measurement; SENTAURUS TCAD; current density; device breakdown voltage; forward current-voltage measurement; homoepitaxial CVD diamond; p-type Schottky barrier diode fabrication; temperature 293 K to 298 K; voltage 25 V; Ohmic contacts; Plasma temperature; Power electronics; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor materials; Sputter etching; Thermal conductivity; Voltage; Device characterisation; Diamond; Power semiconductor device; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5279255