• DocumentCode
    1674238
  • Title

    Direct-digital RF modulator IC in 0.13 μm CMOS for wide-band multi-radio applications

  • Author

    Eloranta, Petri ; Seppinen, Pauli

  • Author_Institution
    Nokia, Helsinki, Finland
  • fYear
    2005
  • Firstpage
    532
  • Abstract
    An IQ-modulator constructed using direct digital-to-RF converters for wide-band multi-radio applications achieves better than -43dBc of LO-leakage and -47dBc of image rejection. The signal-level dependent maximum power consumption is 60.5mW with a -10dBm WCDMA signal. The modulator occupies 0.7mm2 of silicon area in a standard 1.2V 0.13 μm CMOS process.
  • Keywords
    3G mobile communication; CMOS integrated circuits; digital-analogue conversion; modulators; oscillators; radiofrequency integrated circuits; 0.13 mm; 1.2 V; 60.5 mW; CMOS process; IQ-modulator; LO-leakage; WCDMA signal; direct digital-to-RF converters; direct-digital RF modulator IC; image rejection; wide-band multi-radio applications; Application specific integrated circuits; CMOS integrated circuits; CMOS process; Energy consumption; Image converters; Multiaccess communication; Radio frequency; Radiofrequency integrated circuits; Silicon; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1494104
  • Filename
    1494104
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1674238