• DocumentCode
    167425
  • Title

    Phase changes study of the InP crystal under external stress

  • Author

    Liu Gang ; Zhang Ru

  • Author_Institution
    Century Coll., Beijing Univ. of Posts & Telecommun., Beijing, China
  • fYear
    2014
  • fDate
    8-9 May 2014
  • Firstpage
    168
  • Lastpage
    172
  • Abstract
    The ultrasoft pseudopotential plane method was used to calculate and analyze the electronic structure of the InP crystal under external stress. Results of calculations of the energy band structure show that with increasing external stress, the InP crystal band gap decreases until it disappears at 18 Gpa. Under external stress, the calculation and analysis of the state density and Mulliken electronic population illustrates that the energy band structure changes in InP are mainly due to changes in the distribution of In atom 5s and 5p conduction band electrons and the P atom 2p upper valence band electrons. In terms of structural changes in the electronic system, the In atom 5p and P atom 2p electrons play the dominant role. Under stress, the In-P bond becomes more covalent.
  • Keywords
    III-V semiconductors; conduction bands; crystal structure; energy gap; indium compounds; stress analysis; InP; Mulliken electronic population; crystal band gap; electronic structure; electronic system; energy band structure; external stress; phase change study; state density analysis; ultrasoft pseudopotential plane method; valence band electrons; Crystals; Educational institutions; Indium phosphide; Optical saturation; Orbits; Telecommunications; Visualization; Density function theory; Electronic structure; InP;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Computer and Applications, 2014 IEEE Workshop on
  • Conference_Location
    Ottawa, ON
  • Type

    conf

  • DOI
    10.1109/IWECA.2014.6845585
  • Filename
    6845585