DocumentCode
167425
Title
Phase changes study of the InP crystal under external stress
Author
Liu Gang ; Zhang Ru
Author_Institution
Century Coll., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear
2014
fDate
8-9 May 2014
Firstpage
168
Lastpage
172
Abstract
The ultrasoft pseudopotential plane method was used to calculate and analyze the electronic structure of the InP crystal under external stress. Results of calculations of the energy band structure show that with increasing external stress, the InP crystal band gap decreases until it disappears at 18 Gpa. Under external stress, the calculation and analysis of the state density and Mulliken electronic population illustrates that the energy band structure changes in InP are mainly due to changes in the distribution of In atom 5s and 5p conduction band electrons and the P atom 2p upper valence band electrons. In terms of structural changes in the electronic system, the In atom 5p and P atom 2p electrons play the dominant role. Under stress, the In-P bond becomes more covalent.
Keywords
III-V semiconductors; conduction bands; crystal structure; energy gap; indium compounds; stress analysis; InP; Mulliken electronic population; crystal band gap; electronic structure; electronic system; energy band structure; external stress; phase change study; state density analysis; ultrasoft pseudopotential plane method; valence band electrons; Crystals; Educational institutions; Indium phosphide; Optical saturation; Orbits; Telecommunications; Visualization; Density function theory; Electronic structure; InP;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Computer and Applications, 2014 IEEE Workshop on
Conference_Location
Ottawa, ON
Type
conf
DOI
10.1109/IWECA.2014.6845585
Filename
6845585
Link To Document