Title :
A systematic study of ESD protection structures for RF ICs
Author :
Chen, Guang ; Feng, Haigang ; Wang, Albert
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
We report the first systematic investigation of various ESD protection structures, e.g., diodes, ggNMOS, gcNMOS, ggPMOS, SCR and multi-mode SCR´s in a 0.35 μm production BiCMOS technology, for RF ICs up to 100 GHz by mixed-mode ESD simulation. Typical circuit parameters for RF ICs, e.g., parasitic resistances, capacitances, noise figures and S-parameters were studied. The comparison study suggests that compact SCR-type structures and diode strings may be solutions to RF ESD protection.
Keywords :
BiCMOS integrated circuits; S-parameters; capacitance; electric resistance; electrostatic discharge; protection; radiofrequency integrated circuits; semiconductor diodes; thyristors; 0.35 micron; 100 GHz; BiCMOS technology; ESD protection structures; RF ESD protection; compact SCR-type structures; diode strings; gate-coupled NMOS; grounded-gate NMOSFET; grounded-gate PMOS; mixed-mode ESD simulation; multi-mode SCR; noise figures; parasitic capacitances; parasitic resistances; scattering parameters; BiCMOS integrated circuits; Circuit simulation; Diodes; Electrostatic discharge; Noise figure; Parasitic capacitance; Production systems; Protection; Radio frequency; Thyristors;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213959
