An F-band resistive mixer based on heterostructure field effect transistor technology

A fundamentally pumped millimeter-wave resistive mixer based on an HFET (heterostructure FET) technology operating at F-band (90-140 GHz) is described. Nonlinear simulations have been performed for this mixer based on a specially designed double delta -doped pseudomorphic HFET device developed for this application. A minimum conversion loss of 12 dB at an LO (local oscillator)-power of 9 dBm, including the losses in the waveguide-microstrip transitions, filters, substrates, etc., was obtained in the frequency range of 108-116 GHz. Conversion losses can be decreased by reducing source bonding inductances and improving device parameters. Conversion losses of the device itself were estimated to be 8-9 dB.<>