Title :
A high gain low noise 110 GHz monolithic two-stage amplifier
Author :
Wang, H. ; Tan, K.L. ; Ton, T.N. ; Dow, G.S. ; Liu, P.H. ; Streit, D.C. ; Berenz, J. ; Pospieszalski, M.W. ; Pan, S.K.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A high-gain low-noise 110-GHz monolithic two-stage amplifier using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT (high electron mobility transistor) technology is presented. This amplifier demonstrates a small signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6 dB associated gain was obtained at 113 GHz. The superior results of this monolithic low-noise amplifier allow system applications at 110 GHz, such as radiometers and low-noise receivers.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 110 GHz; 113 GHz; 15.6 dB; 19.6 dB; 3.4 dB; 3.9 dB; AlGaAs-InGaAs-GaAs; low-noise HEMT; low-noise receivers; monolithic two-stage amplifier; radiometers; small signal gain; Frequency; Gain; Gallium arsenide; HEMTs; Indium phosphide; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; MMICs; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276757
