DocumentCode :
1674430
Title :
Detection of dopamine via FRET between Alexa Fluors
Author :
Seo, Chang-hwan ; Kim, Jong-sung
Author_Institution :
Dept. of Chem. & Bioeng., Kyungwon Univ., South Korea
fYear :
2010
Firstpage :
840
Lastpage :
841
Abstract :
Recently, various novel biosensors have been widely studied and developed for early diagnostics of various diseases. Fluorescence Resonance Energy Transfer (FRET) is a physical phenomenon between two fluorophores which transfers emission energy from donor to acceptor for excitation. We have shown that FRET can be used for sensing neurotransmitters which are related with brain diseases such as Alzheimer´s disease, Parkinsonism, and High blood pressure. In this paper, FRET between two Alexa Fluors has been investigated and the effect of FRET efficiency depending on dopamine concentration has been studied. Alexa Fluor 594 (AF594) as a donor has been labeled to protein A (PA), and conjugated with anti-dopamine labeled by Alexa Fluor 546 (AF546) which is used as an acceptor. The fluorescent excitation and emission scans for two fluorophores have been obtained using photoluminescence spectroscopy (PL). The FRET efficiency was obtained from intensity ratio of the fluorescent spectra with and without acceptor group. The dependence of FRET efficiency on dopamine concentration shows that dopamine can be detected by monitoring the FRET phenomena between two fluorescent dyes.
Keywords :
biosensors; diseases; drugs; dyes; fluorescence; molecular biophysics; neurophysiology; photoluminescence; proteins; Alexa Fluor 546; Alexa Fluor 594; FRET; antidopamine; biosensors; dopamine detection; fluorescence resonance energy transfer; fluorescent dyes; fluorescent emission; fluorescent excitation; fluorescent spectra; fluorophores; photoluminescence spectroscopy; protein A; Alzheimer´s disease; Biomedical monitoring; Biosensors; Blood pressure; Energy exchange; Fluorescence; Neurotransmitters; Parkinson´s disease; Proteins; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425172
Filename :
5425172
Link To Document :
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