Title :
Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz
Author :
Yang, M.T. ; Ho, Patricia P C ; Wang, Y.J. ; Yeh, T.J. ; Chia, Y.T.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
A broadband small-signal model suitable for deep sub-micron MOSFET high frequency applications and its parameter extraction have been proposed and demonstrated. Using a 110 GHz millimeter wave S-Parameter measurement, we directly extracted the parameters and fitted very well within a broad range from 45 MHz up to 110 GHz. This is a state-of-the-art technique that demonstrates the model up to 110 GHz and can be considered as an initial method for an optimization procedure to be used for more complete models.
Keywords :
MOSFET; S-parameters; millimetre wave field effect transistors; semiconductor device models; 45 MHz to 110 GHz; broadband small-signal model; deep submicron MOSFET; high-frequency characteristics; millimeter-wave S-parameters; optimization; parameter extraction; CMOS technology; Coupling circuits; Equivalent circuits; Frequency; Integrated circuit measurements; Integrated circuit technology; MOSFETs; Parameter extraction; Radiofrequency integrated circuits; Scattering parameters;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213964
