Title :
The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μm technology nodes
Author :
Huang, C.H. ; Chan, K.T. ; Chen, C.Y. ; Chin, Albert ; Huang, G.W. ; Tseng, C. ; Liang, V. ; Chen, J.K. ; Chien, S.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
As scaling down the RF MOSFET from 0.18 to 0.13 μm technology nodes, the fT increases but the NFmin becomes worse by increasing ∼0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 μm MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0.13 μm is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.
Keywords :
MOSFET; equivalent circuits; semiconductor device models; semiconductor device noise; 0.18 to 0.13 micron; 0.93 dB; 5.8 GHz; RF MOSFET; cutoff frequency; device scaling; equivalent circuit model; finger number; gate resistance; minimum noise figure; substrate effect; Circuit noise; Electrical resistance measurement; Equivalent circuits; Fingers; Low-frequency noise; MOSFETs; Noise figure; Noise generators; Noise measurement; Radio frequency;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213965
