Microwave oscillation of GaAs/AlAs heterostructure interval transferred electron devices

Author

Xue, Fangshi ; Deng, Yanmao ; Zhang, Chongren

Author_Institution

Nat. Lab. for Superlattices, Beijing, China

fYear

1995

Firstpage

390

Lastpage

392

Abstract

The Heterostructure Intervalley Transferred Electron (HITE) devices with a GaAs/AlAs band mixing quantum well are introduced in this paper. We briefly describe the constrictor of this new millimeter wave oscillating diode and its main oscillating behaviour. It can produce up to 320 mW at 8 mm wave band with the highest conversion efficiency of 8% and 2 W pulse output with efficiency of 10%. The function of oscillating frequency and output power versus bias voltage is investigated. At last we briefly describe the theoretical electric field and current distribution and the microwave operation model for forward and reverse-biased devices, from which the oscillating behaviour has been explained. The HITE effect and its devices have been thoroughly analyzed through this work

Keywords

Gunn oscillators; III-V semiconductors; aluminium compounds; gallium arsenide; millimetre wave oscillators; semiconductor heterojunctions; semiconductor quantum wells; 10 percent; 2 W; 320 mW; 8 mm; 8 percent; GaAs-AlAs; HITE device; band mixing quantum well; constrictor; conversion efficiency; current distribution; electric field distribution; heterostructure interval transferred electron device; microwave oscillation; millimeter wave oscillation; operation model; output power; Electrons; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Optical scattering; Particle scattering; Power generation; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500174

Filename

500174