Study of the thermal annealing characteristic on SI-GaAs wafers

Author

Li, Guangping ; Ru, Qiongna ; Li, Jing ; He, Xiukun ; Shenjun Nin ; Guo, Xiaobing

Author_Institution

Tianjin Electron. Mater. Inst., China

fYear

1995

Firstpage

396

Lastpage

398

Abstract

The technology of traditional and multi-step thermal annealing on SI-GaAs wafers after crystal growth is investigated. The effect of annealing technology on the wafer characteristics is studied by infrared absorption, chemical etching, Hall effect, photo-stimulation current and X ray double crystal diffraction. The crystal homogeneity is improved by multiple step thermal annealing. The effect on EL2 concentration and the mechanism of the thermal annealing induced homogeneity improvement are discussed

Keywords

Hall effect; III-V semiconductors; X-ray diffraction; annealing; deep levels; defect absorption spectra; dislocation density; etching; gallium arsenide; infrared spectra; photoconductivity; EL2 concentration; GaAs; Hall effect; SI-GaAs wafers; X ray double crystal diffraction; chemical etching; crystal homogeneity; infrared absorption; multi-step thermal annealing; photo-stimulation current; thermal annealing characteristic; Chemical technology; Conductivity; Crystalline materials; Etching; Gallium arsenide; Helium; Rapid thermal annealing; Temperature distribution; Thermal stresses; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500176

Filename

500176