Title :
The application of ion implantation in GaAs IC
Author :
Li, Guohui ; Han, Wei ; Luo, Yan ; Han, Dejun ; Ji, Chengzhou
Author_Institution :
Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China
Abstract :
This paper reports the application of ion implantation in planar GaAs device fabrication, including Si ion implantation to create high quality channels, O and H ion implantation to produce device isolation, and MeV Si and O ion implantation to form internal links
Keywords :
III-V semiconductors; MESFET integrated circuits; bipolar integrated circuits; gallium arsenide; ion implantation; isolation technology; GaAs HBT IC; GaAs MESFET IC; GaAs:H; GaAs:O; GaAs:Si; H ion implantation; O ion implantation; Si ion implantation; device isolation; high quality channels; internal links; ion implantation; planar GaAs device fabrication; Annealing; Application specific integrated circuits; Electron traps; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Ion implantation; Isolation technology; MESFETs; Nuclear physics;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500177
