• DocumentCode
    1674657
  • Title

    The application of ion implantation in GaAs IC

  • Author

    Li, Guohui ; Han, Wei ; Luo, Yan ; Han, Dejun ; Ji, Chengzhou

  • Author_Institution
    Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China
  • fYear
    1995
  • Firstpage
    399
  • Lastpage
    401
  • Abstract
    This paper reports the application of ion implantation in planar GaAs device fabrication, including Si ion implantation to create high quality channels, O and H ion implantation to produce device isolation, and MeV Si and O ion implantation to form internal links
  • Keywords
    III-V semiconductors; MESFET integrated circuits; bipolar integrated circuits; gallium arsenide; ion implantation; isolation technology; GaAs HBT IC; GaAs MESFET IC; GaAs:H; GaAs:O; GaAs:Si; H ion implantation; O ion implantation; Si ion implantation; device isolation; high quality channels; internal links; ion implantation; planar GaAs device fabrication; Annealing; Application specific integrated circuits; Electron traps; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Ion implantation; Isolation technology; MESFETs; Nuclear physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.500177
  • Filename
    500177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1674657