W-CDMA 1 chip SiGe TX-IC with high dynamic range and accurate temperature compensation VGA

Author

Nakamizo, Hideyuki ; Ueda, Tetsuya ; Ninomiya, Keiji ; Takahashi, Yoshinori ; Matsunami, Yoshinori ; Joba, Hiroyuki ; Itoh, Kenji ; Malhi, Duljit S. ; Wang, Dawn

Author_Institution

Mobile Terminal Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2003

Firstpage

399

Lastpage

402

Abstract

This paper demonstrates the 1chip SiGe TX-IC for W-CDMA mobile terminals. For the TX-IC, a novel architecture of a variable gain amplifier is proposed to improve temperature compensation of gain and distortion. And current consumption of variable gain amplifier can be reduced with power control level and it is constant over temperature. The current consumption of the TX-IC is 84 mA with output power of +7 dBm, and it is reduced to 63 mA with output power of -83.5 dBm. With the 0.25 μm SiGe BiCMOS technology, this TX-IC achieved high dynamic range over 100dB within ±2.5 dB accuracy over temperature.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; amplifiers; code division multiple access; compensation; mobile handsets; semiconductor materials; transceivers; 0.25 micron; 63 mA; 84 mA; BiCMOS technology; SiGe; W-CDMA mobile terminal; current consumption; dynamic range; output power; power control; single-chip SiGe TX-IC; temperature compensation; variable gain amplifier; BiCMOS integrated circuits; Dynamic range; Gain; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Power control; Power generation; Silicon germanium; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213971

Filename

1213971