Title :
The study of light doped chromium SI-GaAs single crystal in the LEC technology
Author :
Jinliang Yuan ; Qi, Dege ; Lai, Zhanping ; Niu, Shenjun ; Du, Gengna ; Liu, Yanfeng
Author_Institution :
46th Res. Inst., Minist. of Electron. Ind., Tianjin, China
Abstract :
In this paper, a special technique using light doped or super-light doped (LDC or SLDC) chromium is reported with a LEC system. It is able to obtain repeatedly SI-GaAs crystals of high resistivity and mobility, and to decrease resistivity inhomogeneities substantially. A new model of the compensation mechanism for LDC and SLDC is established
Keywords :
III-V semiconductors; carrier mobility; charge compensation; chromium; crystal growth from melt; electrical resistivity; gallium arsenide; semiconductor doping; semiconductor growth; GaAs:Cr; LEC technology; compensation mechanism; high mobility; high resistivity; light doped SI-GaAs:Cr single crystals; resistivity inhomogeneities; super-light doping; Chromium; Conductivity; Crystalline materials; Electronics industry; Gallium arsenide; Impurities; Lighting; Microwave devices; Microwave integrated circuits; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500178
