Current handling and thermal considerations in a high current semiconductor switch package

Author

Dugdale, Pamela ; Woodworth, Arthur

Author_Institution

Int. Rectifier GB, Oxted, UK

Volume

1

fYear

2000

fDate

6/22/1905 12:00:00 AM

Firstpage

284

Abstract

In response to the need for a high current, low inductance, low resistance package, International Rectifier have designed the Supertab MOSFET. This new device is capable of carrying currents in excess of 200 A. The Supertab package is different from existing power MOSFET packages in that the source connection is made through a tab rather than a lead. This paper presents a discussion of the way in which a combination of experimental work and computer modelling has been used to develop this high current discrete semiconductor switch package

Keywords

field effect transistor switches; inductance; power MOSFET; semiconductor device packaging; International Rectifier; Supertab MOSFET; current handling; high current; high current semiconductor switch package; low inductance; low resistance package; power MOSFET packages; source connection; tab; thermal considerations; Contact resistance; Inductance; MOSFET circuits; Plastic packaging; Rectifiers; Semiconductor device packaging; Silicon; Switches; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE

Conference_Location

New Orleans, LA

Print_ISBN

0-7803-5864-3

Type

conf

DOI

10.1109/APEC.2000.826117

Filename

826117