Title :
Silicon carbide PiN physically-based model implemented in the Pspice circuit simulator
Author :
González, L.H. ; Claudio, A. ; Rodríguez, M.A. ; Ponce, M. ; Rosales, P. ; Zuñiga-I, C.
Author_Institution :
ESIME-C, I.P.N., Mexico City, Mexico
Abstract :
The main novelty in this paper is modeling with PSPICE the real stored charge inside SiC PIN diodes depending on the working regime of the device (turn-on, on-state, and turn-off). The developed model is based on the adequate calculation of the ambipolar length (L) as a function of the charge injected to the N- region, which allows finding an analytical solution for the ambipolar diffusion equation (ADE). In special during the turn-off, the carrier concentration was modeled in three different regions. The physical-based model allows predicting dynamic and static behaviors of the SiC PIN diode.
Keywords :
SPICE; carrier density; charge injection; p-i-n diodes; silicon compounds; wide band gap semiconductors; PIN diodes; PSPICE circuit simulator; SiC; ambipolar diffusion equation; ambipolar length; carrier concentration; charge injection; stored charge; Circuit simulation; Conducting materials; Doping; Electrons; Equations; Predictive models; Semiconductor diodes; Semiconductor process modeling; Silicon carbide; Thermal conductivity; Modeling; Pspice; Silicon carbide;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
