Title :
A Si/SiGe BiCMOS mixer with 3rd-order nonlinearity cancellation for WCDMA applications (student paper)
Author :
Sheng, Liwei ; Larson, Lawrence E.
Author_Institution :
Center for Wireless Commun., California Univ., San Diego, La Jolla, CA, USA
Abstract :
This paper presents a general analysis of the 3rd-order nonlinearity of a differential common-emitter (CE) radio frequency (RF) amplifier and an improved way to cancel the 3rd-order nonlinearity. A SiGe BiCMOS mixer is designed, based on the 3rd-order cancellation scheme. The mixer achieves +6 dBm IIP3, 15 dB gain and 7.7 dB DSB NF with only 2.2 mA current at 2.1 GHz. This performance exceeds that of previously reported active mixers in this frequency range.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF mixers; code division multiple access; elemental semiconductors; integrated circuit design; integrated circuit measurement; integrated circuit noise; semiconductor materials; silicon; 15 dB; 2.1 GHz; 2.2 mA; 7.7 dB; CE RF amplifiers; IIP3; Si-SiGe; Si/SiGe BiCMOS mixer frequency range; UHF amplifiers; UHF mixer current consumption; WCDMA; active mixer gain/DSB NF; differential common-emitter radio frequency amplifiers; mixer third-order nonlinearity cancellation; BiCMOS integrated circuits; Capacitance; Differential amplifiers; Germanium silicon alloys; Linearity; Multiaccess communication; Radio frequency; Silicon germanium; Transfer functions; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213975
