Title :
High linearity CMOS SOI mixer
Author :
Lovelace, David ; Losser, D. ; Kelly, David
Author_Institution :
Analog Technol. Center, Stand. Microsystems, Inc, Phoenix, AZ, USA
Abstract :
This paper describes the design of a single-ended CMOS SOI mixer with very high linearity. The mixer delivers +23dBm of IIP3 with a conversion loss of 6.5dB at an RF frequency of 1.9GHz, at an LO drive of 0dBm and a bias current of 6.3mA at 3VDC. The mixer is fabricated in a 0.5 μm CMOS SOI process and operates over a frequency range of 900MHz to 2.4GHz drawing 6-8mA of supply current (dependant on LO drive) at a DC supply of only 3V. The chip size is 466 μm × 606 μm and is housed in a six lead SOT-23 package.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF mixers; silicon-on-insulator; 0.5 micron; 3 V; 6 to 8 mA; 6.5 dB; 900 MHz to 2.4 GHz; CMOS SOI mixer; IIP3; conversion loss; linearity; CMOS process; Inductance; Linearity; Mixers; Pins; RF signals; Radio frequency; Radiofrequency integrated circuits; Switches; Switching circuits;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213976
