Title :
Circuit hot carrier reliability simulation in advanced CMOS technology process development
Author :
Fang, Peng ; Li, Ping C. ; Yue, John T.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
DC hot carrier parameters, e.g. Idsat and Idlin, were found to be correlated to AC ring oscillator frequency degradation. The impact of crosstalk induced voltage overshoot on invertor hot carrier degradation was quantified by reliability simulation. A set of designable parameters was used to ensure deep submicron technology hot carrier reliability
Keywords :
CMOS integrated circuits; crosstalk; hot carriers; integrated circuit noise; integrated circuit reliability; semiconductor process modelling; AC ring oscillator frequency degradation; CMOS technology process development; DC hot carrier parameters; Idlin; Idsat; crosstalk induced voltage overshoot; deep submicron technology hot carrier reliability; hot carrier reliability simulation; invertor hot carrier degradation; CMOS process; CMOS technology; Circuit simulation; Circuit testing; Coupling circuits; Degradation; Delay; Frequency; Hot carriers; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500181
