DocumentCode :
1674912
Title :
A study on the estimation of γ total-dose radiation hardness of operational amplifiers
Author :
Lin, Wuyuan ; Su, Wanshi ; You, Zhipu
Author_Institution :
Sichuan Inst. of Solid-State Circuits, China
fYear :
1995
Firstpage :
422
Lastpage :
424
Abstract :
Based on the results from transistor irradiation experiments, a method is presented in the paper to estimate the radiation hardness level of a particular operational amplifier using computer simulation
Keywords :
analogue integrated circuits; digital simulation; gamma-ray effects; integrated circuit modelling; operational amplifiers; radiation hardening (electronics); computer simulation; gamma radiation effects; operational amplifiers; radiation hardness level; total-dose radiation hardness; transistor irradiation experiments; Bipolar transistor circuits; Circuit analysis; Circuit simulation; Condition monitoring; Degradation; Dielectrics; Feedback; Operational amplifiers; Power transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
Type :
conf
DOI :
10.1109/ICSICT.1995.500184
Filename :
500184
Link To Document :
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