DocumentCode
1675037
Title
A differential implementation of the CMOS active-load body-effect mixer
Author
Taris, Thieny ; Begueret, Jean-Baptiste ; Lapuyade, Heme ; Deval, Yann
Author_Institution
IXL Lab., Univ. Bordeaux, Talence, France
fYear
2003
Firstpage
465
Lastpage
468
Abstract
This paper describes the implementation of a new mixer topology. The two input signals applied respectively to the back gate and the gate of two transistors achieve the mixing thanks to the active load body effect. The theoretical study of this effect is presented. Owing to the differential structure, the final circuit provides a conversion gain of more than 10 dB and reaches a 14 dB NF. The linearity is better than -5 dBm IIP3 while the architecture draws only 12 mW. Implemented in a 0.18 μm CMOS VLSI technology, the circuit, dedicated to 3G mobile phone operates at 1.8V voltage supply.
Keywords
CMOS integrated circuits; VLSI; mixers (circuits); radiofrequency integrated circuits; 0.18 micron; 1.8 V; 10 dB; 12 mW; 14 dB; 3G mobile phone; CMOS VLSI technology; IIP3; RFIC; conversion gain; differential active load body effect mixer; linearity; noise figure; CMOS technology; Circuit topology; Computer hacking; Cows; Laboratories; MOSFETs; Radio frequency; Threshold voltage; Variable structure systems; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1213986
Filename
1213986
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