• DocumentCode
    1675048
  • Title

    Semiconductor junction circulators

  • Author

    Davis, L.E. ; Sloan, R.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
  • fYear
    1993
  • Firstpage
    483
  • Abstract
    A semiconductor junction circulator is analyzed, and a predicted 25 dB isolation bandwidth of 6% at 94 GHz is shown using idealized, lossless GaAs at 77 K. A narrowband, lossy, theoretical design example at 40 GHz shows that losses do reduce performance but not to such a degree as to render the device useless. In this narrowband solution the losses due to electron collisions are modeled. The circulation conditions in this example are designed using intersecting impedance curves rather than the tracking solutions achieved in the lossless case. The technology discussed here may be compatible with high-T/sub c/ superconductors and with MMICs (monolithic microwave integrated circuits).<>
  • Keywords
    III-V semiconductors; MMIC; circulators (microwave); gallium arsenide; 40 GHz; 77 K; 94 GHz; GaAs; MMICs; circulation conditions; electron collisions; high-T/sub c/ superconductors; intersecting impedance curves; isolation bandwidth; semiconductor junction circulator; Bandwidth; Circulators; Electrons; Gallium arsenide; Impedance; Integrated circuit technology; MMICs; Narrowband; Performance analysis; Performance loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1993., IEEE MTT-S International
  • Conference_Location
    Atlanta, GA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-1209-0
  • Type

    conf

  • DOI
    10.1109/MWSYM.1993.276774
  • Filename
    276774