DocumentCode
1675048
Title
Semiconductor junction circulators
Author
Davis, L.E. ; Sloan, R.
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fYear
1993
Firstpage
483
Abstract
A semiconductor junction circulator is analyzed, and a predicted 25 dB isolation bandwidth of 6% at 94 GHz is shown using idealized, lossless GaAs at 77 K. A narrowband, lossy, theoretical design example at 40 GHz shows that losses do reduce performance but not to such a degree as to render the device useless. In this narrowband solution the losses due to electron collisions are modeled. The circulation conditions in this example are designed using intersecting impedance curves rather than the tracking solutions achieved in the lossless case. The technology discussed here may be compatible with high-T/sub c/ superconductors and with MMICs (monolithic microwave integrated circuits).<>
Keywords
III-V semiconductors; MMIC; circulators (microwave); gallium arsenide; 40 GHz; 77 K; 94 GHz; GaAs; MMICs; circulation conditions; electron collisions; high-T/sub c/ superconductors; intersecting impedance curves; isolation bandwidth; semiconductor junction circulator; Bandwidth; Circulators; Electrons; Gallium arsenide; Impedance; Integrated circuit technology; MMICs; Narrowband; Performance analysis; Performance loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.276774
Filename
276774
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