Monolithic millimeterwave frequency tripler using a 0.35 μm BiCMOS SiGe technology

Author

Coustou, A. ; Dubuc, D. ; Graffeuil, J. ; Tournier, E. ; Llopis, O. ; Boulanger, C. ; Plana, R. ; Telliez, I.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

fYear

2003

Firstpage

487

Lastpage

490

Abstract

In this paper, we present a 10/30 GHz MMIC tripler using a 0.35 μm, 60 GHz-f_MAX BiCMOS SiGe technology. It exhibits a conversion gain in the -5-3 dB range, a fundamental rejection between -12 and -24 dB over an input dynamic range of -5 dBm. A low additive phase noise of -143 dBc/Hz at a frequency offset of 100 kHz is anticipated. The DC power consumption is 440 mW. The chip surface is 800×650 μm² (0.4 mm² only without the probe pads area). In order to drive this tripler, the design of a MMIC SiGe X-band VCO and its measured performance (0.8 GHz tuning range, -5 dBm output power and -87 dBc/Hz phase noise at 100 kHz off carrier) is also reported.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; MMIC frequency convertors; MMIC oscillators; frequency multipliers; millimetre wave frequency convertors; semiconductor materials; voltage-controlled oscillators; -5 dB; 0.35 micron; 10 GHz; 30 GHz; 440 mW; 60 GHz; EHF; MMIC X-band VCO; MMIC tripler; SiGe; SiGe BiCMOS technology; additive phase noise; millimeter-wave frequency tripler; monolithic MM-wave tripler; Additive noise; BiCMOS integrated circuits; Dynamic range; Energy consumption; Frequency; Germanium silicon alloys; MMICs; Phase noise; Probes; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213991

Filename

1213991