Optical and structural features of silicon-rich a-SiNx:H thin films

Author

Singh, Sarab Preet ; Oton, C.J. ; Srivastava, P. ; Ghosh, Sanatanu ; Prakash, G. Vijaya

Author_Institution

Dept. of Phys., Indian Inst. of Technol. Delhi, New Delhi, India

fYear

2010

Firstpage

793

Lastpage

794

Abstract

In this work we report a systematic study of fabrication parameters and post-heat treatment on the optical features has been done. Enhancement in optical constant on annealing is attributed phase separation into crystalline silicon (c-Si) and other phases due to out- diffusion of hydrogen. We further report the room-temperature photoluminescence from as-deposited hydrogenated amorphous silicon nitride (a-SiN_x:H) films which could be due to formation of silicon nanocrystals and/or structural disorder.

Keywords

amorphous state; annealing; chemical vapour deposition; dielectric thin films; diffusion; hydrogen; optical constants; optical films; optical materials; photochemistry; photoluminescence; silicon compounds; SiN_x:H; amorphous silicon nitride films; annealing; as-deposited silicon nitride films; crystalline silicon; fabrication parameters; hydrogen out-diffusion; hydrogenated silicon nitride films; optical constant; phase separation; photochemical vapour deposition; post-heat treatment; room-temperature photoluminescence; silicon nanocrystals; silicon-rich a-SiN_x:H thin films; structural disorder; temperature 293 K to 298 K; Amorphous silicon; Annealing; Optical films; Optical refraction; Optical sensors; Optical variables control; Photoluminescence; Refractive index; Semiconductor films; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425201

Filename

5425201