Title :
Fully integrated sigma-delta synthesizer suitable for "indirect VCO modulation" in 2.5G application
Author :
Bisanti, B. ; Cipriani, S. ; Carpineto, L. ; Coppola, F. ; Duvivier, E. ; Mouralis, N. ; Ercole, D. ; Puccio, G. ; Roussel, V. ; Cercelaru, S.
Author_Institution :
Texas Instruments France, Villeneuve Loubet, France
Abstract :
A fully integrated ΣΔ fractional synthesizer (included VCO, Loop Filter, Xtal oscillator negative impedance) is implemented in a 0.4 μm, 45 GHz SiGe BiCMOS process. The measured close in phase noise is -106 dBc/Hz at 900 MHz using 26 MHz comparison frequency and frequency resolution less than 5 Hz is achieved. The VCO\´s inductors are not integrated in order to test the PLL performance on different frequency\´s range. Using a 200 kHz close loop bandwidth the level of the tones generated, when critical channels are synthesized, exceed the GSM transmitter specifications without applying any dithering technique. The very low close in phase noise and low level of tone generation, make it suitable for "indirect GMSK VCO modulation" application.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency synthesizers; minimum shift keying; mobile radio; sigma-delta modulation; voltage-controlled oscillators; ΣΔ fractional synthesizer; 0.4 micron; 2.5G application; 200 kHz; 45 GHz; 900 MHz; GMSK VCO modulation; GSM transmitter specifications; PLL performance; SiGe; SiGe BiCMOS process; fully integrated synthesizer; indirect VCO modulation; phase noise; sigma-delta synthesizer; BiCMOS integrated circuits; Delta-sigma modulation; Filters; Frequency; Germanium silicon alloys; Impedance; Phase noise; Silicon germanium; Synthesizers; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213997