DocumentCode
1675352
Title
Design and analysis of on-chip symmetric parallel-plate coupled-line balun for silicon RF integrated circuits
Author
Yang, H.Y.D. ; Castaneda, J.A.
Author_Institution
Broadcom Corp., El Segundo, CA, USA
fYear
2003
Firstpage
527
Lastpage
530
Abstract
In this paper, we present the design and analysis of an on-chip transformer balun for silicon RFICs. High-performance on-chip transformer baluns for low-noise amplifiers and power amplifiers on multi-layer radio-frequency integrated circuits are constructed. Single-end primary and differential secondary are constructed on different dielectric surface planes. The metal windings of the primary and secondary are in parallel to form coupled lines. Both the primary and the secondary are designed symmetrically for differential operation. Additional layer interfaces and vias are used to provide bridges to assure the geometric symmetry. Examples of designs with test results are discussed.
Keywords
UHF amplifiers; UHF power amplifiers; baluns; elemental semiconductors; impedance matching; integrated circuit design; integrated circuit noise; radiofrequency integrated circuits; silicon; 2.43 GHz; LNA; Si; Si RF integrated circuits; Si RFICs; differential operation; differential secondary; layer interfaces; low-noise amplifiers; metal windings; multilayer RFICs; onchip coupled-line balun; onchip symmetric parallel-plate balun; power amplifiers; single-end primary; transformer balun; vias; Bridge circuits; Coupling circuits; Dielectrics; High power amplifiers; Impedance matching; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1214000
Filename
1214000
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