• DocumentCode
    1675352
  • Title

    Design and analysis of on-chip symmetric parallel-plate coupled-line balun for silicon RF integrated circuits

  • Author

    Yang, H.Y.D. ; Castaneda, J.A.

  • Author_Institution
    Broadcom Corp., El Segundo, CA, USA
  • fYear
    2003
  • Firstpage
    527
  • Lastpage
    530
  • Abstract
    In this paper, we present the design and analysis of an on-chip transformer balun for silicon RFICs. High-performance on-chip transformer baluns for low-noise amplifiers and power amplifiers on multi-layer radio-frequency integrated circuits are constructed. Single-end primary and differential secondary are constructed on different dielectric surface planes. The metal windings of the primary and secondary are in parallel to form coupled lines. Both the primary and the secondary are designed symmetrically for differential operation. Additional layer interfaces and vias are used to provide bridges to assure the geometric symmetry. Examples of designs with test results are discussed.
  • Keywords
    UHF amplifiers; UHF power amplifiers; baluns; elemental semiconductors; impedance matching; integrated circuit design; integrated circuit noise; radiofrequency integrated circuits; silicon; 2.43 GHz; LNA; Si; Si RF integrated circuits; Si RFICs; differential operation; differential secondary; layer interfaces; low-noise amplifiers; metal windings; multilayer RFICs; onchip coupled-line balun; onchip symmetric parallel-plate balun; power amplifiers; single-end primary; transformer balun; vias; Bridge circuits; Coupling circuits; Dielectrics; High power amplifiers; Impedance matching; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
  • ISSN
    1529-2517
  • Print_ISBN
    0-7803-7694-3
  • Type

    conf

  • DOI
    10.1109/RFIC.2003.1214000
  • Filename
    1214000