Title :
Models of material parameters for strained Si1-xGex layers and study of hot-carrier transport and high frequency performance of Si/SiGe HBT
Author :
Wu, Wengang ; Zhang, Wanrong ; Zeng, Zheng ; Luo, Jinsheng
Author_Institution :
Inst. of Microelectron., Xian Jiaotong Univ., China
Abstract :
In this paper, the models of material parameters for strained Si 1-xGex layers grown on ⟨100⟩ Si substrate and the hydrodynamics model (HDM) for Si/Si1-xGe x heterojunction system are developed. Based on these models, the hot-carrier transport and high frequency performance of Si/SiGe HBT are simulated numerically. The factors that affect the cut-off frequency fT and the optimum doping profile to improve it are discussed in detail and obtained
Keywords :
Ge-Si alloys; doping profiles; elemental semiconductors; heterojunction bipolar transistors; hot carriers; semiconductor device models; semiconductor doping; semiconductor materials; silicon; HBT; Si; Si-SiGe; cut-off frequency; high frequency performance; hot-carrier transport; hydrodynamics model; material parameters; optimum doping profile; Doping; Electron mobility; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Numerical simulation; Poisson equations; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500238
