Title :
Study on solid phase epitaxy of sputtered SiGe film
Author :
Qi, W.J. ; Li, B.Z. ; Jiang, G.B. ; Huang, W.N. ; Gu, Z.G. ; Lan, C.H.
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectroscopy show the epitaxial character of SiGe film on Si substrate
Keywords :
Ge-Si alloys; Raman spectra; Rutherford backscattering; X-ray diffraction; annealing; diffusion; oxidation; semiconductor growth; semiconductor materials; solid phase epitaxial growth; sputtered coatings; Raman spectroscopy; Rutherford backscattering spectroscopy; Si; SiGe-Si; X-ray diffraction; annealing; diffusion; hetero-epitaxy; high temperature thermal processes; ion beam sputtered film; oxidation; solid phase epitaxy; Annealing; Epitaxial growth; Germanium silicon alloys; Ion beams; Raman scattering; Silicon germanium; Solids; Spectroscopy; Substrates; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500239
