Title :
Side-wall oxide isolation self-aligned technique for SiGe/Si HBTs
Author :
Chen, J.X. ; Zou, D.S. ; Gao, G. ; Han, J.R. ; Dong, X. ; Yuan, Y. ; Zhang, S.M. ; Du, J.Y. ; Wang, D.F. ; Shen, G.D. ; Ni, W.X. ; Willander, M. ; Hansson, G.V.
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
A low temperature side-wall oxide isolation self-aligned technique for SiGe/Si HBTs has been developed, by which the SiGe/Si HBTs with advanced performances have been fabricated. Its current gain is about 70 at 300 K and is more than 2000 at 77 K. It also has superior saturation characteristics with Early voltage over 200 V. Moreover, using this technique, the transverse base resistance is reduced by 50%, resulting in the cutoff frequency and the maximum frequency of oscillation being increased considerably. NF is reduced by 3 dB, compared with those devices fabricated by the conventional Si techniques
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; isolation technology; leakage currents; semiconductor materials; semiconductor technology; silicon; 77 to 300 K; Early voltage; HBTs; SiGe-Si; current gain; cutoff frequency; maximum frequency of oscillation; saturation characteristics; self-aligned technique; side-wall oxide isolation; transverse base resistance; Cutoff frequency; Electron beams; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Leakage current; Silicon germanium; Temperature; Voltage; Wet etching;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500241
