DocumentCode
1675771
Title
Theoretical analysis of static induction thyristor
Author
Li, S.Y. ; Liu, R.X. ; Yang, J.H.
Author_Institution
Dept. of Phys., Lanzhou Univ., China
fYear
1995
Firstpage
468
Lastpage
472
Abstract
The potential distributions in the whole structure of an SITH are obtained by employing numerical simulation. A barrier to electrons is observed in the channel. The manner in which the barrier varies with the gate bias is studied. The crucial roles of the barrier in controlling the operating states are discussed
Keywords
semiconductor device models; thyristors; voltage distribution; electron barrier; gate bias; numerical simulation; operating states control; potential distributions; static induction thyristor; Anodes; Cathodes; Doping; Electrons; Energy barrier; P-i-n diodes; Physics; Surface treatment; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500243
Filename
500243
Link To Document