Title :
A monolithic W-band preamplified diode detector
Author :
Wang, H. ; Lam, W. ; Ton, T.N. ; Low, D.C.W. ; Tan, K.L. ; Dow, G.S. ; Allen, B. ; Berenz, J.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs HEMT (high electron mobility transistor) technology was developed. This chip consists of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA) and has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic preamplified diode detector at this frequency. A higher-sensitivity preamplified detector which was built by cascading two monolithic three-stage W-band LNAs with the preamplified detector chip also shows a tangential sensitivity of -85 dBm. This monolithic chip is ideal for insertion into W-band radiometer and passive imaging array systems.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; detector circuits; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 94 GHz; AlGaAs-InGaAs-GaAs; HEMT; Schottky diode detector; W-band; detector responsivity; low-noise amplifier; passive imaging array; preamplified diode detector; radiometer; tangential sensitivity; Envelope detectors; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MODFETs; Radiometry; Schottky diodes; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276802
