Title :
Novel Circuit Model of the Photovoltaic Modules Based on N-Channel MOS Transistor
Author :
Mohamed, Heba N. ; Mahmoud, Sabri A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Sharjah, Sharjah, United Arab Emirates
Abstract :
This paper proposes novel circuit model to simulate photovoltaic (PV) modules at different temperatures. The basic component of the new model is the N-channel enhancement mode MOSFET. The new approach simplifies the I-V output equation of PV module by avoiding the exponential term in the well-known diode models. In addition, it provides the ability to represent the whole PV module by only one MOSFET which reduces the simulation time needed to run a big system. Fast, simple and accurate algorithm is proposed based on the new circuit model. The proposed work is validated with datasheet curves of commercial mono-crystalline silicon, poly-crystalline silicon and copper indium diselenide (CIS) PV modules to have a maximum error as 5.4% of module short circuit current at standard test conditions (STC).
Keywords :
MOSFET; copper compounds; elemental semiconductors; indium compounds; semiconductor device models; silicon; solar cells; ternary semiconductors; CuInSe2; I-V output equation; N-channel MOS transistor; N-channel enhancement mode MOSFET; PV modules; STC; Si; circuit model; commercial monocrystalline silicon PV modules; copper indium diselenide PV modules; datasheet curves; diode models; module short circuit current; polycrystalline silicon PV modules; standard test conditions; Equations; Integrated circuit modeling; MOSFET; MOSFET circuits; Mathematical model; Photovoltaic cells; Semiconductor device modeling; N-MOSFET; algorithm; circuit; modeling; module; photovoltaic (PV); simulation;
Conference_Titel :
Modelling Symposium (EMS), 2013 European
Conference_Location :
Manchester
Print_ISBN :
978-1-4799-2577-3
DOI :
10.1109/EMS.2013.67
