• DocumentCode
    1676263
  • Title

    Modeling a new generation of RF devices: MOSFETs for L-band applications

  • Author

    Costa, J.C. ; Lovelace, D. ; Ngo, D. ; Camilleri, N.

  • Author_Institution
    Motorola, Tempe, AZ, USA
  • fYear
    1993
  • Firstpage
    293
  • Abstract
    Results on large-signal modeling efforts for a novel MOSFET technology for L-band RF applications are presented. A parameter extraction procedure which yields accurate RF MOS large-signal models using DC and S-parameter data is presented along with a comparison of measured and modeled class-B amplifier, mixer, and S-parameter data.<>
  • Keywords
    S-parameters; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; DC parameter data; L-band applications; MOSFETs; RF devices; S-parameter data; parameter extraction; CMOS technology; Capacitance; L-band; MOSFETs; RF signals; Radio frequency; Resistors; SPICE; Scattering parameters; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1993., IEEE MTT-S International
  • Conference_Location
    Atlanta, GA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-1209-0
  • Type

    conf

  • DOI
    10.1109/MWSYM.1993.276820
  • Filename
    276820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1676263