Title :
High reliability power GaAs MESFET under RF overdrive condition
Author :
Hasegawa, H. ; Katsukawa, K. ; Itoh, T. ; Noguchi, T. ; Kaneko, Y.
Author_Institution :
NEC Corp., Tokyo, Japan
Abstract :
It has been confirmed that the SiO/sub 2/-passivation power GaAs MESFETs are very stable compared with the SiN-passivation FETs, especially in terms of RF overdrive operation. Based on the overdrive reliability study that has been conducted, high-power GaAs MESFETs were designed and fabricated. No degradation was observed up to 1500 hours of operation even under very high stress (8-dB gain compression) for these power GaAs MESFETs.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; reliability; solid-state microwave devices; MESFET; RF overdrive condition; SiO/sub 2/ passivation; SiO/sub 2/-GaAs; high-power; microwave power transistors; overdrive reliability; Degradation; FETs; Gallium arsenide; MESFETs; Passivation; Power generation; Radio frequency; Silicon compounds; Stress; Testing;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276821
