MCQW intensity optical modulator for InP based MMIC/photonics integrated circuits

Author

Silva, M.T.C. ; Martinez, M.A.G. ; Herczfeld, P.R.

Author_Institution

Drexel Univ., Philadelphia, PA, USA

fYear

1993

Firstpage

229

Abstract

Chip level integration of photonic devices and MMICs (monolithic microwave integrated circuits) are discussed. The focus is on an InP-based multicoupled quantum well (MCQW) intensity optical modulator. In the proposed configuration, the microwave field induces a periodic structure via the electrorefractive effect. The interaction of light with the induced grating yielding a modulated optical signal. The structure and expected performance of the device are discussed. Simulations reveal that a 270- mu m-long device, operating at -40 V, has a projected bandwidth of 14 GHz at a modulation depth of 0.5. The optical loss for this device length is only 0.24 dB.<>

Keywords

III-V semiconductors; MMIC; electro-optical devices; indium compounds; integrated optoelectronics; optical losses; optical modulation; optical waveguides; refractive index; semiconductor quantum wells; -40 V; 0.24 dB; 14 GHz; 270 micron; InGaAsP-InP; MMIC/photonics integrated circuits; chip level integration; electrorefractive effect; induced grating; intensity optical modulator; microwave field; modulated optical signal; monolithic microwave integrated circuits; multicoupled quantum well; optical loss; periodic structure; Field effect MMICs; Indium phosphide; Integrated optics; Intensity modulation; Microwave devices; Microwave integrated circuits; Microwave photonics; Monolithic integrated circuits; Optical modulation; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276836

Filename

276836