Title :
A physically-based small-signal circuit model for heterostructure acoustic charge transport devices
Author :
Kenney, J.S. ; Hunt, W.D.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The small-signal operation of heterostructure acoustic charge transport (HACT) devices is related to the physical geometries, material parameters, and operating conditions of the device. A model of charge injection based on subthreshold current in GaAs FETs is developed. Good agreement is obtained between measured and predicted current-voltage curves. The model is then applied to a linear model developed previously by the authors to study gain and noise figure (NF), implemented with the Libra microwave analysis program. The predicted gain is for a 160-tap HACT device less than 1 dB from the measured data (above -30 dB insertion loss). The predicted midband noise figure (NF) is within 0.5 dB of the measured NF.<>
Keywords :
acoustic microwave devices; equivalent circuits; modelling; solid-state microwave devices; surface acoustic wave devices; Libra microwave analysis program; acoustic charge transport devices; charge injection; heterostructure ACT devices; linear model; small-signal circuit model; subthreshold current; Acoustic devices; Acoustic materials; Acoustic measurements; Circuits; FETs; Gallium arsenide; Geometry; Noise figure; Noise measurement; Subthreshold current;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276853
